K3523-01R View Datasheet(PDF) - Fuji Electric
Part Name
Description
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K3523-01R Datasheet PDF : 4 Pages
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2SK3523-01R
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3PF
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500
V
Continuous drain current
VDSX *5
ID
500
V
±25
A
Equivalent circuit schematic
Pulsed drain current
ID(puls]
±100
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
25
A
Drain(D)
Maximum Avalanche Energy
EAS
*1
336.5
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
3.125
160
kV/µs
W
Gate(G)
Source(S)
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2
kVrms
*1 L=987µH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C *4 VDS<= 500V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
*6 t=60sec f=60Hz
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=10.5A VGS=10V
Tch=25°C
Tch=125°C
ID=10.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=10.5A
VGS=10V
RGS=10 Ω
VCC=300V
ID=21A
VGS=10V
L=987µH Tch=25°C
IF=21A VGS=0V Tch=25°C
IF=21A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500
V
3.0
5.0
V
25
µA
250
10
100
nA
0.20
0.26 Ω
11
22
S
2280 3420
pF
320
480
16
24
27
41
ns
37
56
75
113
11
17
54
81
nC
16
24
20
30
25
A
0.98
1.50 V
0.7
µs
10.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.781 °C/W
40.0 °C/W
1
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