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IRF634B View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
IRF634B
Fairchild
Fairchild Semiconductor Fairchild
IRF634B Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
1.5
V = 20V
GS
1.0
0.5
Note : TJ = 25
0.0
0
6
12
18
24
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
1000
500
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
10-1
2
25oC
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
V25G0S μ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 50V
V = 125V
DS
8
V = 200V
DS
6
4
2
Note : I = 8.1 A
D
0
0
5
10
15
20
25
30
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, November 2001
 

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