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K1961 Просмотр технического описания (PDF) - SANYO -> Panasonic

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K1961 N-Channel Junction Silicon FET SANYO
SANYO -> Panasonic SANYO
K1961 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Ordering number:ENN4502
N-Channel Junction Silicon FET
2SK1961
High-Frequency Low-Noise
Amplifier Applications
Applications
· High-frequency low-noise amplifier applications.
Features
· Adoption of FBET process.
· Large | yfs |.
· Small Ciss.
· Ultralow noise figure.
Package Dimensions
unit:mm
2019B
[2SK1961]
5.0
4.0
4.0
0.45
0.5
0.45
0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
123
1.3
1.3
Conditions
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
Ratings
Unit
15 V
–15 V
10 mA
100 mA
500 mW
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Forward Transfer Admittance
| yfs |1
| yfs |2
VDS=5V, ID=10mA, f=1kHz
VDS=5V, VGS=0, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss VDS=5V, VGS=0, f=1MHz
* : The 2SK1961 is classified by IDSS as follows : (unit : mA).
40 Y3 52 48 Y4 63 57 Y5 75
Ratings
Unit
min
typ
max
–15
V
–1.0 nA
–1.2 –2.6 –4.5 V
40*
75* mA
15
19
mS
24
32
mS
5.5
pF
1.6
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71599TH (KT)/13194TH (KOTO) X-8395 No.4502–1/6
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