N-Channel Junction Silicon FET
· High-frequency low-noise amplifier applications.
· Adoption of FBET process.
· Large | yfs |.
· Small Ciss.
· Ultralow noise figure.
Absolute Maximum Ratings at Ta = 25˚C
Allowable Power Dissipation
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
VGS(off) VDS=5V, ID=100µA
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Forward Transfer Admittance
| yfs |1
| yfs |2
VDS=5V, ID=10mA, f=1kHz
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
Reverse Transfer Capacitance
Crss VDS=5V, VGS=0, f=1MHz
* : The 2SK1961 is classified by IDSS as follows : (unit : mA).
40 Y3 52 48 Y4 63 57 Y5 75
–1.2 –2.6 –4.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71599TH (KT)/13194TH (KOTO) X-8395 No.4502–1/6