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STP3N100 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STP3N100 Datasheet PDF : 0 Pages
STP36N06L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V ID = 16 A
RG = 50
VGS = 5 V
(see test circuit, figure 3)
VDD = 40 V ID = 32 A
RG = 50
VGS = 5 V
(see test circuit, figure 5)
VDD = 40 V ID = 32 A VGS = 5 V
Min.
Typ.
60
430
Max.
90
630
Unit
ns
ns
130
A/µs
25
35
nC
9
nC
12
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 32 A
RG = 50 VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
90
140
250
Max.
130
200
350
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 32 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 32 A di/dt = 100 A/µs
VDD = 25 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
32
128
Unit
A
A
1.6
V
100
ns
0.2
µC
4
A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
 

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