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STP2N80 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STP2N80 Datasheet PDF : 0 Pages
STP32N06L
STP32N06LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP32N06L
STP32N06LFI
VDSS
60 V
60 V
R DS( on)
< 0.055
< 0.055
ID
32 A
19 A
s TYPICAL RDS(on) = 0.045
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID
Drain Current (continuous) at T c = 25 oC
ID
Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Val ue
STP32N06L
STP32N06LFI
60
60
± 15
32
19
22
13
128
128
105
40
0.7
0. 27
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
 

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