MTP6N60 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

MTP6N60

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics 

MTP6N60

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

MTP6N60

VDSS

600 V

R DS( on)

< 1.2 Ω

ID

6.8 A

s TYPICAL RDS(on) = 1 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S Drain-source Voltage (VGS = 0)

VDG R Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at T c = 25 oC

ID

Drain Current (continuous) at T c = 100 oC

ID M(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

November 1996

Value

600

600

± 20

6.8

4.2

30

125

1

-65 to 150

150

Unit

V

V

V

A

A

A

W

W /oC

oC

oC

1/9

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