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IRF530FP View Datasheet(PDF) - STMicroelectronics

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Description
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IRF530FP Datasheet PDF : 0 Pages
IRF530FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V
ID
RG = 4.7
VGS = 10 V
=8A
VDD = 80 V ID = 16 A VGS = 10 V
Min.
Typ.
12
20
32
9
13
Max.
16
28
44
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V ID = 16 A
RG = 4.7 VGS = 10 V
Min.
Typ.
11
12
25
Max.
15
17
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 16 A VGS = 0
trr
Reverse
Time
Qrr
Reverse
Charge
Recovery ISD =16 A
VDD = 30 V
Recovery
IRRM
Reverse
Current
Recovery
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
16
64
Unit
A
A
1.5
V
150
ns
0.8
µC
10
A
3/5
 

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