2N3958 View Datasheet(PDF) - Vishay Semiconductors
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Description
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2N3958 Datasheet PDF : 5 Pages
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2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5
VGS(off) = –2 V
VDS = 20 V
Gate-Source Differential Voltage
vs. Drain Current
100
VDG = 20 V
TA = 25_C
4
3
TA = –55_C
10
25_C
2
1 125_C
0
0
100
–0.5
–1.0
–1.5
–2.0
–2.5
VGS – Gate-Source Voltage (V)
Voltage Differential with Temperature
vs. Drain Current
VDG = 20 V
DTA = 25 to 125_C
10
DTA = –55 to 25_C
1
0.01
0.1
1
ID – Drain Current (mA)
Common Mode Rejection Ratio
vs. Drain Current
130
120
CMRR = 20 log
DVDG
D VGS1 – VGS2
110
DVDG = 10 – 20 V
100
5 – 10 V
90
1
0.01
0.1
1
ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
100
80
0.01
0.1
1
ID – Drain Current (mA)
On-Resistance vs. Drain Current
1k
80
60
VGS(off) = –3 V
40
AV + 1
gfs RL
) RLgos
–2 V
20 Assume VDD = 15 V, VDS = 5 V
RL
+
10 V
ID
0
0.01
0.1
1
ID – Drain Current (mA)
www.vishay.com
8-4
800
600
400
200
0
0.01
VGS(off) = –2 V
–3 V
0.1
1
ID – Drain Current (mA)
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
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