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STP3NC90ZFP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STP3NC90ZFP Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STP3NC90Z/FP/STB3NC90Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220 / I2PAK
1.25
62
0.1
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.5
220
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
900
Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp.
ID = 1 mA, VGS = 0
1
Coefficient
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ±20V
±10
Current (VDS = 0)
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.75 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
3
Typ.
4
3.2
Max.
5
3.5
Unit
V
3.5
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.75A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
3
1250
78
7
Max.
Unit
S
pF
pF
pF
2/11
 

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