STW9NB80 View Datasheet(PDF) - STMicroelectronics
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Description
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STW9NB80 Datasheet PDF : 8 Pages
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STW9NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 4.5 A
RG = 4.7 Ω
VGS = 10 V
Min.
T yp.
28
20
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 640 V ID = 9 A VGS = 10 V
Qgs
Gat e-Source Charge RG = 4.7 Ω
VGS = 10 V
Qgd Gate-Drain Charge
53
74
nC
13
nC
25
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 9 A
RG = 4.7 Ω VGS = 10 V
Min.
T yp.
22
22
35
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9.3 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
9
36
Unit
A
A
1.6
V
900
ns
9.2
µC
20
A
Safe Operating Area
Thermal Impedance
3/8
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