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STU10NB80 View Datasheet(PDF) - STMicroelectronics

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Description
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STU10NB80 Datasheet PDF : 5 Pages
1 2 3 4 5
STU10NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 5 A
RG = 4.7
VGS = 10 V
Min.
Typ.
30
13
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 640 V ID = 10 A VGS = 10 V
Qgs
Gate-Source Charge RG = 4.7 VGS = 10 V
Qgd Gate-Drain Charge
70
48
nC
18
nC
31
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 10 A
RG = 4.7 VGS = 10 V
Min.
Typ.
26
23
37
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 10 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 10 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
10
40
Unit
A
A
1.6
V
900
ns
9
µC
20
A
3/5
 

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