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STD2NB80 데이터 시트보기 (PDF) - STMicroelectronics

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STD2NB80 N-CHANNEL 800V - 4.6 ? - 1.9A - IPAK/DPAK PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD2NB80 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD2NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 400 V ID = 1.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 640 V ID =3 A VGS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 3 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 1. 9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 2.6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
12
10
Max.
Unit
ns
ns
17
24
nC
6.5
nC
7.5
nC
Min.
T yp.
15
17
22
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
1.9
7.6
Unit
A
A
1.6
V
650
ns
2.8
µC
8.5
A
Safe Operating Area
Thermal Impedance
3/9
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