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STD2NB80 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD2NB80 N-CHANNEL 800V - 4.6 ? - 1.9A - IPAK/DPAK PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD2NB80 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD2NB80
THERMAL DATA
Rthj-case
Rth j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.27
100
1
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
1.9
176
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =1.3 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
4.6
6.5
1.9
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 1.3 A
Min.
1
T yp.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
440
pF
60
pF
7
pF
2/9
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