STD2NB80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STD2NB80

N-CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH™ MOSFET

STMicroelectronics 

®

STD2NB80

N - CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

ST D2N B80

800 V < 6.5 Ω

1.9 A

s TYPICAL RDS(on) = 4.6 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

IPAK

TO-251

(Suffix ”-1”)

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Parameter

VDS Drain-source Voltage (VGS = 0)

V DGR

VGS

ID

ID

IDM (•)

Ptot

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

January 1999

Value

800

800

± 30

1.9

1.2

7.6

55

0.44

4.5

-65 to 150

150

( 1) ISD ≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Un it

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

1/9

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