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STD2NB80 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD2NB80 N-CHANNEL 800V - 4.6 ? - 1.9A - IPAK/DPAK PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD2NB80 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
®
STD2NB80
N - CHANNEL 800V - 4.6 - 1.9A - IPAK/DPAK
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST D2N B80
800 V < 6.5
1.9 A
s TYPICAL RDS(on) = 4.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL (2500 UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
January 1999
Value
800
800
± 30
1.9
1.2
7.6
55
0.44
4.5
-65 to 150
150
( 1) ISD 2A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/9
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