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STW7NB80 Ver la hoja de datos (PDF) - STMicroelectronics

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STW7NB80 N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247 PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW7NB80 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STW7NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 3 A
RG = 4.7
VGS = 10 V
Min.
Typ.
19
9
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 640 V ID = 6 A VGS = 10 V
Q gs Gat e-Source Charge RG = 4.7 VGS = 10 V
Qgd Gat e-Drain Charge
33
47
nC
11
nC
14
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 6 A
RG = 4.7 VGS = 10 V
Min.
Typ.
11
9
16
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 6 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
6.5
26
Unit
A
A
1.6
V
700
ns
5.8
µC
16.5
A
Safe Operating Area
Thermal Impedance
3/8
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