STW7NB80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STW7NB80

N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247 PowerMESH™ MOSFET

STMicroelectronics 

®

STW7NB80

N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247

PowerMESH™ MOSFET

TYPE

V DSS

RDS(on)

ID

STW 7NB80

800 V

< 1.9 Ω

6.5 A

s TYPICAL RDS(on) = 1.6 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

P a ramet er

V DS

V DGR

VGS

ID

ID

IDM (•)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

T otal Dissipat ion at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Va l u e

800

800

± 30

6.5

4.1

26

160

1.28

4

-65 to 150

150

(1) I SD ≤ 6 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Un it

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

December 1999

1/8

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