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STW7NB80 N-CHANNEL 800V - 1.6Ω - 6.5A - TO-247 PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW7NB80 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STW7NB80
N-CHANNEL 800V - 1.6- 6.5A - TO-247
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STW 7NB80
800 V
< 1.9
6.5 A
s TYPICAL RDS(on) = 1.6
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
800
800
± 30
6.5
4.1
26
160
1.28
4
-65 to 150
150
(1) I SD 6 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
December 1999
1/8
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