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STW11NB80 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталогеКомпоненты Описаниепроизводитель
STW11NB80 N-CHANNEL 800V - 0.65? - 11A - T0-247 PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW11NB80 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STW11NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 5 A
RG = 4.7
VGS = 10 V
Min.
T yp.
30
13
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 640 V ID = 10 A VGS = 10 V
70
nC
Qgs
Gat e-Source Charge RG = 4.7
VGS = 10 V
18
nC
Qgd Gate-Drain Charge
31
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 10 A
RG = 4.7 VGS = 10 V
Min.
T yp.
26
23
37
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 11 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 10 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
Max.
11
44
Unit
A
A
1.6
V
900
ns
9
µC
20
A
Safe Operating Area
Thermal Impedance
3/8
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