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STP140NF75 View Datasheet(PDF) - STMicroelectronics

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STP140NF75 Datasheet PDF : 18 Pages
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STB140NF75 - STP140NF75-1 - STP140NF75
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 120A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120A,
di/dt = 100A/µs,
VDD = 35V, Tj = 150°C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
120 A
480 A
1.5 V
115
ns
450
nC
8
A
5/18
 

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