STP140NF75 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STP140NF75

N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET

STMicroelectronics 

Electrical characteristics

STB140NF75 - STP140NF75-1 - STP140NF75

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

VDS = max ratings

VDS = max ratings,

TC = 125°C

VGS = ± 20V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 70A

75

V

1

µA

10

µA

±100 nA

2

4

V

0.0065 0.0075 Ω

Table 4.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 15V, ID = 70A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 38V, ID = 70A

RG = 4.7Ω VGS = 10V

(see Figure 19)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 60V, ID = 120A,

VGS = 10V

(see Figure 20)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

160

S

5000

pF

960

pF

310

pF

30

ns

140

ns

130

ns

90

ns

160 218 nC

28

nC

70

nC

4/18

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