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STD12NF06T4 データシートの表示(PDF) - STMicroelectronics

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STD12NF06T4 N-channel 60 V, 0.08?, 12 A, DPAK, IPAK STripFET? II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD12NF06T4 Datasheet PDF : 14 Pages
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STD12NF06, STD12NF06T4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12A, VGS = 0
ISD = 12A,
di/dt = 100A/µs,
VDD = 30V, TJ = 150°C
Figure 16 on page 8
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Min Typ. Max Unit
-
12 A
-
48 A
-
1.3 V
50
ns
-
65
nC
3.5
A
Doc ID 8431 Rev 7
5/14
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