STD19NE06L View Datasheet(PDF) - STMicroelectronics
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Description
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STD19NE06L Datasheet PDF : 9 Pages
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STD19NE06L
N-CHANNEL 60V - 0.038 Ω - 19A IPAK/DPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD19NE06L
60 V
<0.05 Ω
19 A
s TYPICAL RDS(on) = 0.038 Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RALAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 2002
.
Value
60
60
± 20
19
13
76
70
0.3
450
-55 to 175
(1) Starting Tj = 25 oC, ID = 9.5 A, VDD = 35 V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/9
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