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Q1NC60R View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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Q1NC60R Datasheet PDF : 9 Pages
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STQ1NC60R
N-CHANNEL 600V - 12- 0.3A TO-92
PowerMESH™II Power MOSFET
TYPE
VDSS
RDS(on)
STQ1NC60R
600 V
< 15
s TYPICAL RDS(on) = 12
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
ID
0.3 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
TO-92
BULK
TO-92
(AMMOPACK)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s LOW SWITCH MODE POWER SUPPLIES
(SMPS)
s BATTERY CHARGER
ORDERING INFORMATION
SALES TYPE
MARKING
STQ1NC60R
Q1NC60R
STQ1NC60R-AP
Q1NC60R
PACKAGE
TO-92
TO-92
PACKAGING
BULK
AMMOPACK
July 2003
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