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STD2NM60 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD2NM60 N-CHANNEL 600V - 2.8? - 2A DPAK/IPAK Zener-Protected MDmesh? Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD2NM60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STD2NM60/STD2NM60-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.73
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
0.5
250
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
600
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
VGS = ± 20V
±5
Current (VDS = 0)
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1 A
Min.
3
Typ.
4
2.8
Max.
5
3.2
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Forward Transconductance
Input Capacitance
VDS > ID(on) x RDS(on)max,
ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Crss
Output Capacitance
Reverse Transfer
Capacitance
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
1.4
160
67
4
3.5
Max.
Unit
S
pF
pF
pF
2/10
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