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IRFBC30 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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IRFBC30 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFBC30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V ID = 2.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 3.6 A VGS = 10 V
Min.
T yp.
14
14
16.5
2.5
9
Max.
23.1
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 3.6 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
T yp.
15
19
24
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 3. 6A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
Max.
3.6
14
Unit
A
A
1.6
V
600
ns
2.8
µC
9
A
Safe Operating Area
Thermal Impedance
3/8
 

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