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STD3NM60 View Datasheet(PDF) - STMicroelectronics

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STD3NM60 Datasheet PDF : 12 Pages
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STP4NM60 / STD3NM60 / STD3NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
VGS = ± 20V
±5
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
4
5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
1.3
1.5
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 1.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Test Conditions
VDD = 300 V, ID = 1.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 480V, ID = 3 A,
VGS = 10V
Min.
Typ.
2.7
324
132
7.4
Typ.
9
4
10
3
4.7
Max.
Max.
14
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V, ID = 3 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
16.5
10.5
15
Max.
Unit
V
µA
µA
µA
V
Unit
S
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
224
1
9
296
1.4
9.3
Max.
3
12
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/12
 

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