D60NF06 View Datasheet(PDF) - STMicroelectronics
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D60NF06 Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STD60NF06
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
V
VDS = Max rating
VDS = Max rating,
TC = 175°C
1
µA
10
µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
2
4
V
VGS = 10V, ID = 30A
0.014 0.016 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 30A
RG = 4.7Ω VGS = 10V
(see Figure 12)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 48V, ID = 60A,
VGS = 10V
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
20
S
1810
pF
360
pF
125
pF
16
ns
108
ns
43
ns
20
ns
49
66
nC
18
nC
14
nC
4/13
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