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STP22NE10L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STP22NE10L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STP22NE10L
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
1.67
62.5
300
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA VGS = 0
100
V
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 oC
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100 nA
ON ()
t(s) Symbol
c VGS(th)
du RDS(on)
Pro ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V
Resistance
VGS = 5 V
ID = 15 A
ID = 15 A
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
22
Typ.
1.6
0.07
0.085
Max.
2.5
0.085
0.1
Unit
V
A
lete DYNAMIC
so Symbol
b gfs ()
) - O Ciss
t(s Coss
Obsolete Produc Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =15 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
19
Max.
Unit
S
1750
pF
165
pF
45
pF
2/8
 

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