B80NF55-08 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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B80NF55-08

N-CHANNEL 55V - 0.0065 Ω- 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

Electrical characteristics

STP80NF55-08 - STB80NF55-08 - STW80NF55-08

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

55

V

IDSS

IGSS

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

VDS = max rating

VDS = max rating@125 °C

VGS = ±20 V

1 µA

10 µA

±100 nA

VGS(th) Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

0.0065 0.008 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance VDS =15 V , ID = 18 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS= 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD= 27 V, ID = 80 A

VGS =10 V

(see Figure 14)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

40

S

3740

pF

830

pF

265

pF

112 155 nC

20

nC

40

nC

4/15

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