BUZ11A View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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BUZ11A Datasheet PDF : 8 Pages
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BUZ11A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
1.67
62.5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30V)
Valu e
30
120
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing Tj = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
50
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10 V ID = 19 A
Resistance
Min.
2.1
Typ.
3
0.045
Max.
4
0.055
Unit
V
Ω
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V ID = 19 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
10
Typ.
17
Max.
Unit
S
1400
pF
200
pF
50
pF
SWITCHING
Symbo l
td(on)
tr
td(off)
tf
P ar am et e r
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
RGS = 4.7 Ω
ID = 15 A
VGS = 10 V
Min.
Typ.
18
95
50
20
Max.
Unit
ns
ns
ns
ns
2/8
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