BUZ11 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

BUZ11

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

ELECTRICAL CHARACTERISTICS (continued)

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Conditions

IS D

ISD M

Source-drain Current

Source-drain Current

(pulsed)

VSD (∗) Forward On Voltage

ISD = 72 A VGS = 0

trr

Reverse Recovery

ISD = 36 A

Time

Qrr Reverse Recovery

Charge

VDD = 30 V

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

di/dt = 100 A/µs

Tj = 150 oC

BUZ11/FI

Min.

Typ.

Max.

36

144

Unit

A

A

2.2

V

90

ns

0.2

µC

Safe Operating Area For TO-220

Safe Operating Area For ISOWATT220

Thermal Impedance For TO-220

Thermal Impedance For ISOWATT220

3/8

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