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STP12NM50FD/FP View Datasheet(PDF) - STMicroelectronics

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STP12NM50FD/FP Datasheet PDF : 18 Pages
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Electrical characteristics
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
3
4
5
V
) RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 6A
0.32 0.4
ct(s Table 5. Dynamic
u Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
rod gfs (1) Forward transconductance VDS =15V, ID = 6A
9.8
S
P Ciss
te Coss
ole Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
1000
pF
390
pF
20
pF
bs Qg Total gate charge
O Qgs Gate-source charge
) - Qgd Gate-drain charge
VDD=400V, ID = 3A
VGS =10V
(see Figure 11)
12
nC
3
nC
7
nC
t(s f=1 MHz Gate DC Bias= 0
c RG Gate input resistance
test signal level = 20mV
2
u open drain
Obsolete Prod 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/18
 

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