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IRFP450 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
IRFP450 N - CHANNEL 500V - 0.33? - 14A - TO-247 PowerMESH? MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
IRFP450 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
IRFP450
N - CHANNEL 500V - 0.33- 14A - TO-247
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
IRFP450
500 V < 0.4
14 A
s TYPICAL RDS(on) = 0.33
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gat e-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
ID
Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
Uni t
500
V
500
V
± 20
V
14
A
8.7
A
56
A
190
W
1.5
W/oC
3.5
-65 to 150
150
(1) ISD 14 A, di/dt 130 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ ns
oC
oC
August 1998
1/8
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