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STP20NM50FP View Datasheet(PDF) - STMicroelectronics

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STP20NM50FP Datasheet PDF : 14 Pages
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STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 14)
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Min. Typ. Max. Unit
24
ns
16
ns
40
ns
12
ns
9
ns
8.5
ns
23
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD (2) Forward on voltage
ISD=20A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj= 25°C
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
20
A
80
A
1.5
V
350
ns
4.6
µC
26
A
435
ns
5.9
µC
27
A
5/14
 

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