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D60NF3LL View Datasheet(PDF) - STMicroelectronics

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D60NF3LL Datasheet PDF : 13 Pages
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Electrical characteristics
2
Electrical characteristics
STD60NF3LL
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
VDS = Max rating
VDS = Max rating,
TC = 125°C
VGS = ± 16V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
30
V
1
µA
10
µA
±100 nA
1
V
0.0075 0.0095
0.0085 0.0105
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 30A
RG = 4.7VGS = 4.5V
(see Figure 12)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24V, ID = 60A,
VGS = 4.5V, RG = 4.7
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
30
S
2210
pF
635
pF
138
pF
22
ns
130
ns
36.5
ns
36.5
ns
30
40
nC
9
nC
12.5
nC
4/13
 

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