IRF634 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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IRF634

N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

STMicroelectronics 

IRF634 - IRF634FP

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

Source-drain current

Source-drain Current

(pulsed

VSD (2) Forward on voltage

ISD = 8 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8A, di/dt = 100A/µs

VDD = 30V, Tj = 150°C

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

8

A

32

A

1.7

V

198

ns

1.1

nC

11.3

A

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