IRF634 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
IRF634 Datasheet PDF : 14 Pages
| |||
Electrical characteristics
2
Electrical characteristics
IRF634 - IRF634FP
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS Breakdown Voltage
ID = 250 µA, VGS = 0
250
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
µA
10 µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
±100 nA
VGS(th)
t(s) RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4 A
2
3
4
V
0.38 0.45 Ω
duc Table 5.
ro Symbol
Dynamic
Parameter
Test conditions
te P gfs (1)
ole Ciss
bs Coss
O Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID = 4A
VDS = 25V, f = 1MHz,
VGS = 0
) - td(on)
t(s tr
c td(Voff)
u tf
Turn-on delay time
Rise time
Turn-off- delay time
Fall time
VDD = 125V, ID = 4A
RG = 4.7Ω VGS = 10V
rod Qg
Total gate charge
Qgs Gate-source charge
P Qgd Gate-drain charge
VDD = 200V, ID = 8A,
VGS = 10V
Obsolete1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
7
8
S
770
pF
118
pF
48
13
ns
18
ns
51
ns
16
ns
37 51.8 nC
5.2
nC
14.8
nC
4/14
|
|
Share Link: 