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STD110NH02LT4 View Datasheet(PDF) - STMicroelectronics
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STD110NH02LT4
N-channel 24V - 0.0044Ω - 80A - DPAK STripFET™ III Power MOSFET
STMicroelectronics
STD110NH02LT4 Datasheet PDF : 15 Pages
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STD110NH02L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 10V, I
D
= 40A,
R
G
= 4.7
Ω,
V
GS
= 10V
Figure 13 on page 8
Min. Typ. Max. Unit
14
ns
224
ns
69
ns
40 54 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I
SD
I
SDM
V
SD(1)
t
rr
Q
rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I
SD
= 40A, V
GS
= 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80A,
di/dt = 100A/µs,
V
DD
= 15V, T
J
= 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.3 V
47
ns
58
µC
2.5
A
5/15
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