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STD110NH02LT4 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STD110NH02LT4 N-channel 24V - 0.0044Ω - 80A - DPAK STripFET™ III Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD110NH02LT4 Datasheet PDF : 15 Pages
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STD110NH02L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 10V, ID = 40A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
14
ns
224
ns
69
ns
40 54 ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 40A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A,
di/dt = 100A/µs,
VDD = 15V, TJ = 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.3 V
47
ns
58
µC
2.5
A
5/15
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