STD110NH02LT4 View Datasheet(PDF) - STMicroelectronics

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Description

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STD110NH02LT4

N-channel 24V - 0.0044Ω - 80A - DPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD110NH02L

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Vspike (1) Drain-source voltage rating

VDS Drain-source voltage (VGS = 0)

VDGR Drain-gate voltage (RGS = 20KΩ)

VGS

ID (2)

ID (2)

IDM (3)

Drain-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

EAS (4) Single pulse avalanche energy

Tstg Storage temperature

TJ Max. operating junction temperature

1. Garanted when external Rg = 4.7 Ω and tf < tfmax.

2. Value limited by wire bonding.

3. Pulse width limited by safe operating area

4. Starting TJ = 25 oC, ID = 30A, VDD = 15V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

24

24

± 20

80

80

320

125

0.83

900

-55 to 175

Unit

V

V

V

V

A

A

A

W

W/°C

mJ

°C

Value

1.20

100

275

Unit

°C/W

°C/W

°C

3/15

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