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Y100NS20FD View Datasheet(PDF) - STMicroelectronics

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Y100NS20FD Datasheet PDF : 12 Pages
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STY100NS20FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test Condictions
VDD = 100V, ID = 50A
RG = 4.7VGS = 10V
(see Figure 12)
VDD = 100V, ID = 100A,
RG = 4.7, VGS = 10V
(see Figure 12)
Min. Typ. Max. Unit
42
ns
140
ns
245
ns
140
ns
220
ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 100A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=100A, Tj=150°C
di/dt = 100A/µs,
VDD=160V, (see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
100 A
400 A
1.6 V
225
ns
1.35
µC
12
A
5/12
 

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