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Y100NS20FD View Datasheet(PDF) - STMicroelectronics

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Description
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Y100NS20FD Datasheet PDF : 12 Pages
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STY100NS20FD
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20 k)
VGS Gate- source voltage
ID Drain current (continuos) at TC = 25°C
ID Drain current (continuos) at TC = 100°C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD <100A, di/dt < 200A/µs, VDD = 80% V(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Electrical ratings
Value
200
200
±20
100
63
400
450
3.6
25
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Value
0.277
30
300
Value
110
750
Unit
°C/W
°C/W
°C
Unit
A
mJ
3/12
 

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