datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

IRF630 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
IRF630 N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
IRF630 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF630 - IRF630FP
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A, VGS=0
ISD=9A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
9
A
36 A
1.5 V
170
ns
0.95
µC
11
A
5/14
Direct download click here
 

Share Link : ST-Microelectronics
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]