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IRF630 View Datasheet(PDF) - STMicroelectronics

Part NameIRF630 ST-Microelectronics
STMicroelectronics ST-Microelectronics
DescriptionN-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
IRF630 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
IRF630 - IRF630FP
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
200
V
Zero gate voltage drain
IDSS current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
± 100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 4.5A
0.35 0.40
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID = 4.5A
VDS =25V, f=1 MHz, VGS=0
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 100V, ID = 4.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=160V, ID = 9A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
34
S
540 700 pF
90 120 pF
35 50 pF
10 14 ns
15 20 ns
31 45 nC
7.5
nC
9
nC
4/14
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Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

General features
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized

Applications
■ Switching application

 

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