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IRF630 View Datasheet(PDF) - STMicroelectronics

Part NameIRF630 ST-Microelectronics
STMicroelectronics ST-Microelectronics
DescriptionN-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
IRF630 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IRF630 - IRF630FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(2)
PTOT
dv/dt (3)
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO
TJ
Tstg
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 9A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Rthc-sink
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220
TO-220FP
200
200
± 20
9
5.7
36
9(1)
5.7(1)
36(1)
75
30
0.6
0.24
5
--
2000
-65 to 150
150
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
Value
Unit
TO-220
TO-220FP
1.67
62.5
0.5
4.17 °C/W
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
9
A
160
mJ
3/14
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Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

General features
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized

Applications
■ Switching application

 

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