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IRF630(1999) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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IRF630 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF630/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 100 V ID = 4.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V ID = 9 A VGS = 10 V
Min.
Typ.
10
15
31
7.5
9
Max.
14
20
45
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 9 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
12
12
25
Max.
17
17
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
9
36
Unit
A
A
1.5
V
170
ns
0.95
µC
11
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
 

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