FDT439N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDT439N Datasheet PDF : 8 Pages
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June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-
state resistance, and provide superior switching
performance. These products are well suited to low
voltage, low current applications such as notebook
computer power management, battery powered
circuits, and DC motor control.
Applications
DC/DC converter
Load switch
Motor driving
Features
6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V
RDS(on) = 0.058 Ω @ VGS = 2.5 V
Fast switching speed.
High power and current handling capabitlity in a
widely used surface mount package.
D
D
D
SOT-223
S
D
G
G
D
S
S
SOT-223* G
G
(J2 3Z)
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
FDT439N
30
±8
6.3
20
3
1.3
1.1
-55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDT439N
FDT439N
13’’
42
12
Tape Width
12mm
D
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDT439N, Rev. C
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