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STD5NE10T4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD5NE10T4 Datasheet PDF : 3 Pages
1 2 3
STD5NE10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
6
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max
100
oC/W
Rthc-sink Thermal Resistance Case-sink
Typ
1. 5
oC/W
Tl
Maximum Lead Temperature F or Soldering Purpose
275
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 30V)
Max Value
5
25
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
100
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2. 5 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2
Typ.
3
0.32
Max.
4
0.4
Unit
V
5
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 2. 5 A
Min.
Typ.
2.5
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
305
pF
45
pF
21
pF
2/9
 

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