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STD5NE10LT4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD5NE10LT4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
STD5NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 50 V
RG = 4.7
ID = 2.5 A
VGS = 5 V
Min.
T yp.
7
17
Max.
9
22
Unit
ns
ns
Qg
Total Gate Charge
VDD = 80 V ID = 5 A VGS = 5 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
10
14
nC
5
nC
4
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V
RG = 4.7
ID = 5 A
VGS = 10 V
Min.
T yp.
8
9
19
Max.
10
12
25
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 8 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5 A
VDD = 30 V
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
T yp.
Max.
5
20
1.5
75
190
5
Unit
A
A
V
ns
µC
A
3/5
 

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